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Week - 1 |
p-n Junctions |
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Week - 2 |
Application of bias |
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Week - 3 |
Depletion layer capacitance |
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Week - 4 |
Static I-V characteristics of p-n junction diodes |
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Week - 5 |
Real Diodes |
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Week - 6 |
Generation recombination effects in the depletion region |
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Week - 7 |
The series resistance effect
High injection effect
Temperature effect |
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Week - 8 |
Dynamic behaviour of p-n junctions
Diffusion capacitance |
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Week - 9 |
An equivalent circuit of a p-n junction
Transient Behaviour |
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Week - 10 |
Electrical breakdown in p-n junctions
Zener Breakdown
Avalanche Breakdown |
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Week - 11 |
Majority Carriers Diodes
Tunnel Diode
Backward Diode |
|
Week - 12 |
p-n junction solar cell |
|
Week - 13 |
Bipolar Transistor |
|
Week - 14 |
Field Effect Transistor (FET) |
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